Fin-FET 14 nm node
device |
3D-NAND device |
Image Description: High speed ion milling, SIM image highlighting grain contrast of bond wire |
Image Description: Multiple sites processed for lift out by Auto-pilot Automation software |
Features: • Time Sharing mode resolves high-quality SEM imaging with any detector and any milling condition for end-point detection in real time. • Cut & See mode for ultra-high resolution imaging in HR mode. • Simultaneous observation for traditional imaging |
FOV: 20 μm Number of cut: 200 Cutting interval: 20 nm SEM accelerating voltage: 1.5 kV Sample: Fuel cell electrode (Ni-YSZ) Sample courtesy of Prof. Naoki Shikazono, Institute of Industrial Science, The University of Tokyo |
Al2O3 single crystal in the <110> plane. Dark contrast (red arrow) areas indicates Gallium ion induced damage at 2 kV. The right image shows the same single-crystal structure intact after applying 1 kV Argon ion milling revealing clear crystal lattice fringes. |
FIB | SIM resolution* | 4 nm @ 30 kV, 60 nm @ 2 kV (Edge resolution) |
---|---|---|
Accelerating voltage | 0.5 kV – 30 kV | |
Beam current | 100 nA | |
Ion source | Ga Liquid Metal Ion Source | |
SEM | SEM resolution* | 1.5 nm @ 1 kV, 0.7 nm @ 15 kV |
Accelerating voltage | 0.1 kV – 30 kV | |
Max. beam current | 10 nA | |
Electron source | Cold cathode field emission | |
Detectors | In-column secondary
electron detector, SE (U) In-column backscattered electron detector, BSE (U) In-column backscattered electron detector, BSE (L) Chamber mounted secondary electron detector, SE (L) |
|
5-axis motorized stage (with feedback control) | X | 155 mm |
Y | 155 mm | |
Z | 16.5 mm | |
R | 0 - 360° endless | |
T | -10~59° | |
Maximum sample size | 150 mm in diameter | |
Option | Ar/Xe ion beam system Micro-sampling system Gas injection system (2 or 3 reservoirs)
Auto processing software Automatic TEM sample preparation software Various sample holders EDS (Energy Dispersive X-ray Spectroscopy) system EBSD (Electron BackScatter Diffraction) system |