Quadrapole SIMS Microprobe for dopant depth profiling and thin layer analysis in semiconductors.
The CAMECA SIMS 4550 offers extended capabilities for ultra shallow depth profiling, trace element and composition measurements of thin layers in Si, high-k, SiGe and other compound materials such as III-V for optical devices.
High depth resolution and high throughput
With ever shrinking device dimensions, the implant profiles and layer thickness of today
semiconductors are often in the range of 1-10nm. The
SIMS 4550 has been optimized to address
these application fields by offering
oxygen and cesium high density primary beam with an impact
energy programmable from 5keV down to less than 150eV.
CAMECA's SIMS 4550 is a dynamic SIMS tool offering
full flexibility in sputter conditions
(impact angle, energy, species).
With dedicated options for charge compensation (electron gun, laser) during sample sputtering,
insulating materials can be easily analyzed. Sample holders can accommodate a variety of samples:
small pieces of a few mm² up to 100mm diameter sample size.
The SIMS 4550 offers excellent sensitivity for H, C, N and O thanks to its advanced
UHV design with main chamber pressure in the low E-10mbar (E-8Pa) range.
The profiles above show the structure of a GaN LED. The SIMS 4550 measures layer thickness, alignment,
abruptness, integrity, uniformity and stoechiometry.
High precision and automation
State-of-the-art quadrupole analyzer optics and superior peak to background performance are key factors for
low detection limits for trace elements. Ultra stable ion sources and electronics ensure highest
precision and repeatability of measurements down to < 0.2% RSD. The human factor on precision is well taken
into consideration by easy-to-use software, predefined recipes, remote operation and trouble shooting.
All instrument settings of each measurement are stored in a database. Repeated measurements are therefore only a
few mouse clicks away. Further automation features queued measurements on multiple samples with individual
measurement settings (recipes).
Overview of the technique
The most sensitive elemental & isotopic surface microanalysis technique
Introduction to the SIMS technique
When a solid sample is sputtered by primary ions of few keV energy, a fraction of the particles emitted from the target is ionized.
Spectrometry consists of analyzing these secondary ions with a mass spectrometer.
Secondary ion emission by a solid surface under ion bombardment supplies information about the elemental, isotopic and
molecular composition of its uppermost atomic layers. The secondary ion yields will vary greatly according to the
chemical environment and the sputtering conditions (ion, energy, angle). This can add complexity to the quantitative aspect of
the technique. SIMS is nevertheless recognized as the most sensitive elemental and isotopic surface analysis technique.
The SIMS technique provides a unique combination of extremely high sensitivity for all elements from Hydrogen
to Uranium and above (detection limit down to ppb level for many elements), high lateral resolution imaging
(down to 40 nm), and a very low background that allows high dynamic range (more than 5 decades). This technique
is "destructive" by its nature (sputtering of material). It can be applied to any type of material (insulators, semiconductors,
metals) that can stay under vacuum.
While Static SIMS concentrates on the first top monolayer, providing mostly molecular characterization, in dynamic SIMS mode,
bulk composition and depth distribution of trace elements are investigated with a depth resolution ranging from sub-nm to tens
of nm. This is why SIMS is one of the most widespread surface analysis techniques for advanced material research.
CAMECA: world leader in SIMS
Since pioneering Secondary Ion Mass Spectrometry in the 1960's, CAMECA has developed a complete SIMS product line. Each of
our high-end instruments ensures the best performance for a given application.