The CAMECA SIMS 4600 is a full-wafer quadrupole SIMS with top performances in next generation
semiconductor element depth profiling. Based on the experience gained with the SIMS 4550, it
provides the same performances but add the
200mm or 300mm full wafer
analysis and mapping
capabilities (see example below). The wafers are handled horizontally and the geometry has
been optimized in order to be compatible with:
• single normal incidence oxygen FLIG gun or
• dual beam configuration (normal oxygen FLIG and 60° cesium FLIG ion guns).
In addition to be working in unattended mode with wafer cassettes, the key points of the SIMS 4600 are:
Reference performances in high depth resolution analysis. This derives mainly from:
• Oxygen and cesium Floating Low energy Ion Gun technology (FLIG), exceeding by far the performance of
conventional or extraction floating ion columns used in other conventional SIMS. The performance in
cesium beam have been impressively improved with the adaptation of the CAMECA Microbeam high brightness
ion source, now common on all our SIMS range.
• A low field of extraction of the quadrupole analyzer facilitating the use of low energy primary ions.
Reference performances in automation and reproducibility for metrology, deriving mainly from:
• a superior redesign of the quadrupole analyzer optics (extraction, transfer, gating, post-acceleration),
• a user-friendly chain analysis software and a renowned ease of use of the instrument, reducing the need for
• ultra stable ion sources and electronics for unattended overnight measurements.
Finally, the unique Checkerboard capability allows the operator to check the validity of the results,
remove artifacts from sample inhomogeneity or dusts, without having to re-run the analysis. This adds
greatly to the throughput of the instrument, reproducibility and reliability of the results.
Process uniformity control of BF2 implant (2.2 keV) and spike annealing process – Cameca full wafer
SIMS 4600 in comparison with sheet resistance measurement.
The spike anneal does not change the dose map of the single wafer implanter. Junction depth and sheet resistance show a similar circular pattern, probably caused by slight temperature differences. A rotational stage was used during the RTP step.