High Performance 3D Atom Probe for Semiconductors, Electronic Devices, and Nanomagnetics
The LEAP 4000X Si™ is a high performance atom probe microscope which provides nano-scale surface,
bulk and interfacial materials analysis of simple and complex structures with atom-by-atom
identification and accurate spatial positioning.
The system works using the principle of field evaporation, whereby a strong electric field applied
to the specimen is sufficient to cause removal of atoms by ionization. Atom removal is triggered
either via a voltage or laser pulse applied to the sample.
The LEAP Si provides the following key features:
• Fastest data collection speed
• Local electrode and microtip compatibility
• Variable flight path
Small spot UV Laser
The system uses a UV laser with a tightly focused spot when in laser mode.
The small UV laser spot enables exceptional mass resolution to be obtained.
The use of UV wavelength enables a wide variety of materials, including many
insulators, to be analyzed with good yield.
Local Electrode and Microtips
The name "LEAP" is derived from Local Electrode Atom Probe.
The local electrode provides both
ease of use and data quality
as well as enabling the use of prefabricated Microtip™ arrays.
Using these enables multiple analytical specimens to be prepared,
mounted and loaded into the instrument for maximum efficiency
with multi-user and/or multi-experiment scenarios.
Variable flight path
The LEAP 4000X Si™ is a straight flight-path system which allows
up to 1 MHz laser pulsing for fast throughput, high data collection
efficiency and large field of view. The flight-path length is variable,
which allows the user flexibility in choice of mass resolution versus